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Home>Product>Discrete Semiconductor Products>Transistors - IGBTs - Single>GPA030A135MN-FDR
GPA030A135MN-FDR
SemiQ
MPN： GPA030A135MN-FDR
Categories： Transistors - IGBTs - Single
Stock： 47687
Description： IGBT 1350V 60A 329W TO3PN
Datasheet： Download Now
RFQ： RFQ
Call us： 0755-83299131
inquiry： info@springic.net
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SemiQ
  • Manufacturer
    SemiQ
  • Manufacturer Product Number
    GPA030A135MN-FDR
  • Stock
    47687
  • Package
    Tube
  • Series
  • IGBT Type
    Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max)
    1350 V
  • Current - Collector (Ic) (Max)
    60 A
  • Current - Collector Pulsed (Icm)
    90 A
  • Vce(on) (Max) @ Vge, Ic
    2.4V @ 15V, 30A
  • Power - Max
    329 W
  • Switching Energy
    4.4mJ (on), 1.18mJ (off)
  • Input Type
    Standard
  • Gate Charge
    300 nC
  • Td (on/off) @ 25°C
    30ns/145ns
  • Test Condition
    600V, 30A, 5Ohm, 15V
  • Reverse Recovery Time (trr)
    450 ns
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Package / Case
    TO-3P-3, SC-65-3
  • Supplier Device Package
    TO-3PN