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GT8G133(TE12L,Q)
GT8G133(TE12L,Q)
Toshiba Semiconductor and Storage
MPN：
GT8G133(TE12L,Q)
Categories：
Transistors - IGBTs - Single
Stock：
1379
Description：
IGBT 400V 600MW 8TSSOP
Datasheet：
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RFQ：
RFQ
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Description
Datasheet
Manufacturer
Toshiba Semiconductor and Storage
Manufacturer Product Number
GT8G133(TE12L,Q)
Stock
1379
Package
Tape & Reel (TR)
Series
IGBT Type
Voltage - Collector Emitter Breakdown (Max)
400 V
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
150 A
Vce(on) (Max) @ Vge, Ic
2.9V @ 4V, 150A
Power - Max
600 mW
Switching Energy
Input Type
Standard
Gate Charge
Td (on/off) @ 25°C
1.7µs/2µs
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-TSSOP (0.173
Supplier Device Package
4.40mm Width)
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