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Home>Product>Discrete Semiconductor Products>Transistors - IGBTs - Single>GT10J312(Q)
GT10J312(Q)
Toshiba Semiconductor and Storage
MPN： GT10J312(Q)
Categories： Transistors - IGBTs - Single
Stock： 95938
Description： IGBT 600V 10A 60W TO220SM
Datasheet： Download Now
RFQ： RFQ
Call us： 0755-83299131
inquiry： info@springic.net
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  • Manufacturer
    Toshiba Semiconductor and Storage
  • Manufacturer Product Number
    GT10J312(Q)
  • Stock
    95938
  • Package
    Tube
  • Series
  • IGBT Type
  • Voltage - Collector Emitter Breakdown (Max)
    600 V
  • Current - Collector (Ic) (Max)
    10 A
  • Current - Collector Pulsed (Icm)
    20 A
  • Vce(on) (Max) @ Vge, Ic
    2.7V @ 15V, 10A
  • Power - Max
    60 W
  • Switching Energy
  • Input Type
    Standard
  • Gate Charge
  • Td (on/off) @ 25°C
    400ns/400ns
  • Test Condition
    300V, 10A, 100Ohm, 15V
  • Reverse Recovery Time (trr)
    200 ns
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package
    TO-220SM