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Home>Product>Discrete Semiconductor Products>Transistors - IGBTs - Single>HGTD3N60C3S9A
HGTD3N60C3S9A
onsemi
MPN： HGTD3N60C3S9A
Categories： Transistors - IGBTs - Single
Stock： 7710
Description： IGBT 600V 6A 33W TO252AA
Datasheet： Download Now
RFQ： RFQ
Call us： 0755-83299131
inquiry： info@springic.net
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  • Manufacturer
    onsemi
  • Manufacturer Product Number
    HGTD3N60C3S9A
  • Stock
    7710
  • Package
    Tape & Reel (TR)
  • Series
  • IGBT Type
  • Voltage - Collector Emitter Breakdown (Max)
    600 V
  • Current - Collector (Ic) (Max)
    6 A
  • Current - Collector Pulsed (Icm)
    24 A
  • Vce(on) (Max) @ Vge, Ic
    2V @ 15V, 3A
  • Power - Max
    33 W
  • Switching Energy
    85µJ (on), 245µJ (off)
  • Input Type
    Standard
  • Gate Charge
    10.8 nC
  • Td (on/off) @ 25°C
  • Test Condition
    480V, 3A, 82Ohm, 15V
  • Reverse Recovery Time (trr)
  • Operating Temperature
    -40°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package
    TO-252AA