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Home>Product>Discrete Semiconductor Products>Transistors - IGBTs - Single>HGT1S10N120BNS
HGT1S10N120BNS
onsemi
MPN： HGT1S10N120BNS
Categories： Transistors - IGBTs - Single
Stock： 12476
Description： IGBT 1200V 35A 298W TO263AB
Datasheet： Download Now
RFQ： RFQ
Call us： 0755-83299131
inquiry： info@springic.net
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onsemi
  • Manufacturer
    onsemi
  • Manufacturer Product Number
    HGT1S10N120BNS
  • Stock
    12476
  • Package
    Tube
  • Series
  • IGBT Type
    NPT
  • Voltage - Collector Emitter Breakdown (Max)
    1200 V
  • Current - Collector (Ic) (Max)
    35 A
  • Current - Collector Pulsed (Icm)
    80 A
  • Vce(on) (Max) @ Vge, Ic
    2.7V @ 15V, 10A
  • Power - Max
    298 W
  • Switching Energy
    320µJ (on), 800µJ (off)
  • Input Type
    Standard
  • Gate Charge
    100 nC
  • Td (on/off) @ 25°C
    23ns/165ns
  • Test Condition
    960V, 10A, 10Ohm, 15V
  • Reverse Recovery Time (trr)
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package
    D²PAK (TO-263)