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Home>Product>Discrete Semiconductor Products>Transistors - IGBTs - Single>GT30J121(Q)
GT30J121(Q)
Toshiba Semiconductor and Storage
MPN： GT30J121(Q)
Categories： Transistors - IGBTs - Single
Stock： 6473
Description： IGBT 600V 30A 170W TO3PN
Datasheet： Download Now
RFQ： RFQ
Call us： 0755-83299131
inquiry： info@springic.net
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  • Manufacturer
    Toshiba Semiconductor and Storage
  • Manufacturer Product Number
    GT30J121(Q)
  • Stock
    6473
  • Package
    Tube
  • Series
  • IGBT Type
  • Voltage - Collector Emitter Breakdown (Max)
    600 V
  • Current - Collector (Ic) (Max)
    30 A
  • Current - Collector Pulsed (Icm)
    60 A
  • Vce(on) (Max) @ Vge, Ic
    2.45V @ 15V, 30A
  • Power - Max
    170 W
  • Switching Energy
    1mJ (on), 800µJ (off)
  • Input Type
    Standard
  • Gate Charge
  • Td (on/off) @ 25°C
    90ns/300ns
  • Test Condition
    300V, 30A, 24Ohm, 15V
  • Reverse Recovery Time (trr)
  • Operating Temperature
  • Mounting Type
    Through Hole
  • Package / Case
    TO-3P-3, SC-65-3
  • Supplier Device Package
    TO-3P(N)