S P R I N G I C
Language:

Need Help? 0755-83299131

Tel 0755-83299131
Email info@springic.net
Home>Product>Discrete Semiconductor Products>Transistors - IGBTs - Single>GT20N135SRA,S1E
GT20N135SRA,S1E
Toshiba Semiconductor and Storage
MPN： GT20N135SRA,S1E
Categories： Transistors - IGBTs - Single
Stock： 59677
Description： D-IGBT TO-247 VCES=1350V IC=40A
Datasheet： Download Now
RFQ： RFQ
Call us： 0755-83299131
inquiry： info@springic.net
Recommended For You
IKW30N60DTPXKSA1
IKW30N60DTPXKSA1
Infineon Technologies
FGB40N6S2
FGB40N6S2
Fairchild Semiconductor
IGTH20N40AD
IGTH20N40AD
Harris Corporation
IGP30N65F5XKSA1
IGP30N65F5XKSA1
Infineon Technologies
RJH60M2DPE-00#J3
RJH60M2DPE-00#J3
Renesas Electronics America Inc
  • Manufacturer
    Toshiba Semiconductor and Storage
  • Manufacturer Product Number
    GT20N135SRA,S1E
  • Stock
    59677
  • Package
    Tube
  • Series
  • IGBT Type
  • Voltage - Collector Emitter Breakdown (Max)
    1350 V
  • Current - Collector (Ic) (Max)
    40 A
  • Current - Collector Pulsed (Icm)
    80 A
  • Vce(on) (Max) @ Vge, Ic
    2.4V @ 15V, 40A
  • Power - Max
    312 W
  • Switching Energy
    -, 700µJ (off)
  • Input Type
    Standard
  • Gate Charge
    185 nC
  • Td (on/off) @ 25°C
  • Test Condition
    300V, 40A, 39Ohm, 15V
  • Reverse Recovery Time (trr)
  • Operating Temperature
    175°C (TJ)
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Supplier Device Package
    TO-247