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Home>Product>Discrete Semiconductor Products>Transistors - IGBTs - Single>STGYA120M65DF2
STGYA120M65DF2
STMicroelectronics
MPN： STGYA120M65DF2
Categories： Transistors - IGBTs - Single
Stock： 36467
Description： TRENCH GATE FIELD-STOP IGBT, M S
Datasheet： Download Now
RFQ： RFQ
Call us： 0755-83299131
inquiry： info@springic.net
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STMicroelectronics
  • Manufacturer
    STMicroelectronics
  • Manufacturer Product Number
    STGYA120M65DF2
  • Stock
    36467
  • Package
    Tube
  • Series
    M
  • IGBT Type
    NPT, Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max)
    650 V
  • Current - Collector (Ic) (Max)
    160 A
  • Current - Collector Pulsed (Icm)
    360 A
  • Vce(on) (Max) @ Vge, Ic
    1.95V @ 15V, 120A
  • Power - Max
    625 W
  • Switching Energy
    1.8mJ (on), 4.41mJ (off)
  • Input Type
    Standard
  • Gate Charge
    420 nC
  • Td (on/off) @ 25°C
    66ns/185ns
  • Test Condition
    400V, 120A, 4.7Ohm, 15V
  • Reverse Recovery Time (trr)
    202 ns
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3 Exposed Pad
  • Supplier Device Package
    MAX247™