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Home>Product>Discrete Semiconductor Products>Transistors - IGBTs - Single>SIGC109T120R3
SIGC109T120R3
Infineon Technologies
MPN： SIGC109T120R3
Categories： Transistors - IGBTs - Single
Stock： 92711
Description： INSULATED GATE BIPOLAR TRANSISTO
Datasheet： Download Now
RFQ： RFQ
Call us： 0755-83502530
inquiry： 2912879482@qq.com
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Infineon Technologies
  • Manufacturer
    Infineon Technologies
  • Manufacturer Product Number
    SIGC109T120R3
  • Stock
    92711
  • Package
    Bulk
  • Series
  • IGBT Type
    Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max)
    1200 V
  • Current - Collector (Ic) (Max)
  • Current - Collector Pulsed (Icm)
    300 A
  • Vce(on) (Max) @ Vge, Ic
    2.1V @ 15V, 100A
  • Power - Max
  • Switching Energy
  • Input Type
    Standard
  • Gate Charge
  • Td (on/off) @ 25°C
  • Test Condition
  • Reverse Recovery Time (trr)
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Package / Case
    Die
  • Supplier Device Package
    Die