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Home>Product>Discrete Semiconductor Products>Transistors - IGBTs - Single>GT30N135SRA,S1E
GT30N135SRA,S1E
Toshiba Semiconductor and Storage
MPN： GT30N135SRA,S1E
Categories： Transistors - IGBTs - Single
Stock： 14471
Description： D-IGBT TO-247 VCES=1350V IC=30A
Datasheet： Download Now
RFQ： RFQ
Call us： 0755-83299131
inquiry： info@springic.net
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  • Manufacturer
    Toshiba Semiconductor and Storage
  • Manufacturer Product Number
    GT30N135SRA,S1E
  • Stock
    14471
  • Package
    Tube
  • Series
  • IGBT Type
  • Voltage - Collector Emitter Breakdown (Max)
    1350 V
  • Current - Collector (Ic) (Max)
    60 A
  • Current - Collector Pulsed (Icm)
    120 A
  • Vce(on) (Max) @ Vge, Ic
    2.6V @ 15V, 60A
  • Power - Max
    348 W
  • Switching Energy
    -, 1.3mJ (off)
  • Input Type
    Standard
  • Gate Charge
    270 nC
  • Td (on/off) @ 25°C
  • Test Condition
    300V, 60A, 39Ohm, 15V
  • Reverse Recovery Time (trr)
  • Operating Temperature
    175°C (TJ)
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Supplier Device Package
    TO-247