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Home>Product>Discrete Semiconductor Products>Transistors - IGBTs - Single>HGT1S12N60B3S
HGT1S12N60B3S
Harris Corporation
MPN： HGT1S12N60B3S
Categories： Transistors - IGBTs - Single
Stock： 25887
Description： 27A, 600V, UFS N-CHANNEL IGBT
Datasheet： Download Now
RFQ： RFQ
Call us： 0755-83299131
inquiry： info@springic.net
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  • Manufacturer
    Harris Corporation
  • Manufacturer Product Number
    HGT1S12N60B3S
  • Stock
    25887
  • Package
    Bulk
  • Series
  • IGBT Type
  • Voltage - Collector Emitter Breakdown (Max)
    600 V
  • Current - Collector (Ic) (Max)
    27 A
  • Current - Collector Pulsed (Icm)
    110 A
  • Vce(on) (Max) @ Vge, Ic
    2.1V @ 15V, 12A
  • Power - Max
    104 W
  • Switching Energy
    304µJ (on), 250µJ (off)
  • Input Type
    Standard
  • Gate Charge
    68 nC
  • Td (on/off) @ 25°C
    26ns/150ns
  • Test Condition
    480V, 12A, 25Ohm, 15V
  • Reverse Recovery Time (trr)
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package
    D2PAK (TO-263)