S P R I N G I C
Language:

Need Help? 0755-83299131

Tel 0755-83299131
Email info@springic.net
Home>Product>Discrete Semiconductor Products>Transistors - IGBTs - Single>MMIX1X200N60B3H1
MMIX1X200N60B3H1
IXYS
MPN： MMIX1X200N60B3H1
Categories： Transistors - IGBTs - Single
Stock： 25640
Description： IGBT 600V 175A 520W SMPD
Datasheet： Download Now
RFQ： RFQ
Call us： 0755-83299131
inquiry： info@springic.net
Recommended For You
APT80GA60LD40
APT80GA60LD40
Microchip Technology
IXXH60N65B4H1
IXXH60N65B4H1
IXYS
IXGH10N170A
IXGH10N170A
IXYS
IXYH75N65C3H1
IXYH75N65C3H1
IXYS
IKQ75N120CT2XKSA1
IKQ75N120CT2XKSA1
Infineon Technologies
  • Manufacturer
    IXYS
  • Manufacturer Product Number
    MMIX1X200N60B3H1
  • Stock
    25640
  • Package
    Tube
  • Series
    GenX3™, XPT™
  • IGBT Type
  • Voltage - Collector Emitter Breakdown (Max)
    600 V
  • Current - Collector (Ic) (Max)
    175 A
  • Current - Collector Pulsed (Icm)
    1000 A
  • Vce(on) (Max) @ Vge, Ic
    1.7V @ 15V, 100A
  • Power - Max
    520 W
  • Switching Energy
    2.85mJ (on), 2.9mJ (off)
  • Input Type
    Standard
  • Gate Charge
    315 nC
  • Td (on/off) @ 25°C
    48ns/160ns
  • Test Condition
    360V, 100A, 1Ohm, 15V
  • Reverse Recovery Time (trr)
    100 ns
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Package / Case
    24-PowerSMD, 21 Leads
  • Supplier Device Package
    24-SMPD