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Home>Product>Discrete Semiconductor Products>Transistors - IGBTs - Single>RGT8NS65DGC9
RGT8NS65DGC9
Rohm Semiconductor
MPN： RGT8NS65DGC9
Categories： Transistors - IGBTs - Single
Stock： 31395
Description： IGBT TRENCH FIELD 650V 8A TO262
Datasheet： Download Now
RFQ： RFQ
Call us： 0755-83299131
inquiry： info@springic.net
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  • Manufacturer
    Rohm Semiconductor
  • Manufacturer Product Number
    RGT8NS65DGC9
  • Stock
    31395
  • Package
    Tube
  • Series
  • IGBT Type
    Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max)
    650 V
  • Current - Collector (Ic) (Max)
    8 A
  • Current - Collector Pulsed (Icm)
    12 A
  • Vce(on) (Max) @ Vge, Ic
    2.1V @ 15V, 4A
  • Power - Max
    65 W
  • Switching Energy
  • Input Type
    Standard
  • Gate Charge
    13.5 nC
  • Td (on/off) @ 25°C
    17ns/69ns
  • Test Condition
    400V, 4A, 50Ohm, 15V
  • Reverse Recovery Time (trr)
    40 ns
  • Operating Temperature
    -40°C ~ 175°C (TJ)
  • Mounting Type
    Through Hole
  • Package / Case
    TO-262-3 Long Leads, I²Pak, TO-262AA
  • Supplier Device Package
    TO-262