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Home>Product>Discrete Semiconductor Products>Transistors - IGBTs - Single>HGTD1N120BNS9A
HGTD1N120BNS9A
onsemi
MPN： HGTD1N120BNS9A
Categories： Transistors - IGBTs - Single
Stock： 47673
Description： IGBT 1200V 5.3A 60W TO252AA
Datasheet： Download Now
RFQ： RFQ
Call us： 0755-83299131
inquiry： info@springic.net
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  • Manufacturer
    onsemi
  • Manufacturer Product Number
    HGTD1N120BNS9A
  • Stock
    47673
  • Package
    Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
  • Series
  • IGBT Type
    NPT
  • Voltage - Collector Emitter Breakdown (Max)
    1200 V
  • Current - Collector (Ic) (Max)
    5.3 A
  • Current - Collector Pulsed (Icm)
    6 A
  • Vce(on) (Max) @ Vge, Ic
    2.9V @ 15V, 1A
  • Power - Max
    60 W
  • Switching Energy
    70µJ (on), 90µJ (off)
  • Input Type
    Standard
  • Gate Charge
    14 nC
  • Td (on/off) @ 25°C
    15ns/67ns
  • Test Condition
    960V, 1A, 82Ohm, 15V
  • Reverse Recovery Time (trr)
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package
    TO-252AA