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Home>Product>Discrete Semiconductor Products>Transistors - IGBTs - Modules>BSM75GB170DN2HOSA1
BSM75GB170DN2HOSA1
Infineon Technologies
MPN： BSM75GB170DN2HOSA1
Categories： Transistors - IGBTs - Modules
Stock： 63704
Description： IGBT MOD 1700V 110A 625W
Datasheet： Download Now
RFQ： RFQ
Call us： 0755-83299131
inquiry： info@springic.net
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  • Manufacturer
    Infineon Technologies
  • Manufacturer Product Number
    BSM75GB170DN2HOSA1
  • Stock
    63704
  • Package
    Bulk,Tray
  • Series
  • IGBT Type
  • Configuration
    Half Bridge
  • Voltage - Collector Emitter Breakdown (Max)
    1700 V
  • Current - Collector (Ic) (Max)
    110 A
  • Power - Max
    625 W
  • Vce(on) (Max) @ Vge, Ic
    3.9V @ 15V, 75A
  • Current - Collector Cutoff (Max)
  • Input Capacitance (Cies) @ Vce
    11 nF @ 25 V
  • Input
    Standard
  • NTC Thermistor
    No
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Chassis Mount
  • Package / Case
    Module
  • Supplier Device Package
    Module