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Home>Product>Discrete Semiconductor Products>Transistors - IGBTs - Modules>FF1200R17KP4B2NOSA2
FF1200R17KP4B2NOSA2
Infineon Technologies
MPN： FF1200R17KP4B2NOSA2
Categories： Transistors - IGBTs - Modules
Stock： 63770
Description： IGBT MODULE 1700V 1200A
Datasheet： Download Now
RFQ： RFQ
Call us： 0755-83502530
inquiry： 2912879482@qq.com
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  • Manufacturer
    Infineon Technologies
  • Manufacturer Product Number
    FF1200R17KP4B2NOSA2
  • Stock
    63770
  • Package
    Tray
  • Series
    IHM-B
  • IGBT Type
    Trench Field Stop
  • Configuration
    2 Independent
  • Voltage - Collector Emitter Breakdown (Max)
    1700 V
  • Current - Collector (Ic) (Max)
    1.7 kA
  • Power - Max
    1.4 kW
  • Vce(on) (Max) @ Vge, Ic
  • Current - Collector Cutoff (Max)
    5 mA
  • Input Capacitance (Cies) @ Vce
    98000 pF @ 25 V
  • Input
    Standard
  • NTC Thermistor
    No
  • Operating Temperature
    -40°C ~ 150°C (TJ)
  • Mounting Type
    Chassis Mount
  • Package / Case
    Module
  • Supplier Device Package
    AG-PRIME2