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Home>Product>Discrete Semiconductor Products>Transistors - IGBTs - Modules>FF900R12IE4VPBOSA1
FF900R12IE4VPBOSA1
Infineon Technologies
MPN： FF900R12IE4VPBOSA1
Categories： Transistors - IGBTs - Modules
Stock： 60645
Description： IGBT MOD 1200V 900A 20MW
Datasheet： Download Now
RFQ： RFQ
Call us： 0755-83502530
inquiry： 2912879482@qq.com
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Infineon Technologies
  • Manufacturer
    Infineon Technologies
  • Manufacturer Product Number
    FF900R12IE4VPBOSA1
  • Stock
    60645
  • Package
    Tray
  • Series
    PrimePACK™2
  • IGBT Type
    Trench Field Stop
  • Configuration
    Half Bridge
  • Voltage - Collector Emitter Breakdown (Max)
    1200 V
  • Current - Collector (Ic) (Max)
    900 A
  • Power - Max
    20 mW
  • Vce(on) (Max) @ Vge, Ic
    2.1V @ 15V, 900A
  • Current - Collector Cutoff (Max)
    5 mA
  • Input Capacitance (Cies) @ Vce
    54 nF @ 25 V
  • Input
    Standard
  • NTC Thermistor
    Yes
  • Operating Temperature
    -40°C ~ 150°C
  • Mounting Type
    Chassis Mount
  • Package / Case
    Module
  • Supplier Device Package
    Module