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Home>Product>Discrete Semiconductor Products>Transistors - IGBTs - Modules>IFS75B12N3E4B31BOSA1
IFS75B12N3E4B31BOSA1
Infineon Technologies
MPN： IFS75B12N3E4B31BOSA1
Categories： Transistors - IGBTs - Modules
Stock： 61237
Description： IGBT MOD 1200V 150A 385W
Datasheet： Download Now
RFQ： RFQ
Call us： 0755-83502530
inquiry： 2912879482@qq.com
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  • Manufacturer
    Infineon Technologies
  • Manufacturer Product Number
    IFS75B12N3E4B31BOSA1
  • Stock
    61237
  • Package
    Tray
  • Series
    MIPAQ™
  • IGBT Type
    Trench Field Stop
  • Configuration
    Full Bridge
  • Voltage - Collector Emitter Breakdown (Max)
    1200 V
  • Current - Collector (Ic) (Max)
    150 A
  • Power - Max
    385 W
  • Vce(on) (Max) @ Vge, Ic
    2.15V @ 15V, 75A
  • Current - Collector Cutoff (Max)
    1 mA
  • Input Capacitance (Cies) @ Vce
    4.3 nF @ 25 V
  • Input
    Standard
  • NTC Thermistor
    Yes
  • Operating Temperature
    -40°C ~ 150°C
  • Mounting Type
    Chassis Mount
  • Package / Case
    Module
  • Supplier Device Package
    Module