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Home>Product>Discrete Semiconductor Products>Transistors - IGBTs - Modules>NXH200T120H3Q2F2STNG
NXH200T120H3Q2F2STNG
onsemi
MPN： NXH200T120H3Q2F2STNG
Categories： Transistors - IGBTs - Modules
Stock： 33033
Description： 80KW GEN-II Q2PACK-200A MODULE W
Datasheet： Download Now
RFQ： RFQ
Call us： 0755-83502530
inquiry： 2912879482@qq.com
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  • Manufacturer
    onsemi
  • Manufacturer Product Number
    NXH200T120H3Q2F2STNG
  • Stock
    33033
  • Package
    Tray
  • Series
  • IGBT Type
    Trench Field Stop
  • Configuration
    Half Bridge
  • Voltage - Collector Emitter Breakdown (Max)
    650 V
  • Current - Collector (Ic) (Max)
    330 A
  • Power - Max
    679 W
  • Vce(on) (Max) @ Vge, Ic
    2.3V @ 15V, 200A
  • Current - Collector Cutoff (Max)
    500 µA
  • Input Capacitance (Cies) @ Vce
    35.615 nF @ 25 V
  • Input
    Standard
  • NTC Thermistor
    No
  • Operating Temperature
    -40°C ~ 175°C (TJ)
  • Mounting Type
    Chassis Mount
  • Package / Case
    Module
  • Supplier Device Package
    56-PIM/Q2PACK (93x47)