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Home>Product>Discrete Semiconductor Products>Transistors - IGBTs - Modules>FF200R12KT3EHOSA1
FF200R12KT3EHOSA1
Infineon Technologies
MPN： FF200R12KT3EHOSA1
Categories： Transistors - IGBTs - Modules
Stock： 83191
Description： IGBT MODULE 1200V 1050W
Datasheet： Download Now
RFQ： RFQ
Call us： 0755-83502530
inquiry： 2912879482@qq.com
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IXYS
  • Manufacturer
    Infineon Technologies
  • Manufacturer Product Number
    FF200R12KT3EHOSA1
  • Stock
    83191
  • Package
    Bulk,Bulk
  • Series
    C
  • IGBT Type
  • Configuration
    2 Independent
  • Voltage - Collector Emitter Breakdown (Max)
    1200 V
  • Current - Collector (Ic) (Max)
  • Power - Max
    1050 W
  • Vce(on) (Max) @ Vge, Ic
    2.15V @ 15V, 200A
  • Current - Collector Cutoff (Max)
    5 mA
  • Input Capacitance (Cies) @ Vce
    14 nF @ 25 V
  • Input
    Standard
  • NTC Thermistor
    No
  • Operating Temperature
    -40°C ~ 125°C
  • Mounting Type
    Chassis Mount
  • Package / Case
    Module
  • Supplier Device Package
    Module