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Home>Product>Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single>2N5657G
2N5657G
onsemi
MPN： 2N5657G
Categories： Transistors - Bipolar (BJT) - Single
Stock： 55004
Description： TRANS NPN 350V 0.5A TO126
Datasheet： Download Now
RFQ： RFQ
Call us： 0755-83502530
inquiry： 2912879482@qq.com
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  • Manufacturer
    onsemi
  • Manufacturer Product Number
    2N5657G
  • Stock
    55004
  • Package
    Bulk,Bulk
  • Series
  • Transistor Type
    NPN
  • Current - Collector (Ic) (Max)
    500 mA
  • Voltage - Collector Emitter Breakdown (Max)
    350 V
  • Vce Saturation (Max) @ Ib, Ic
    10V @ 100mA, 500mA
  • Current - Collector Cutoff (Max)
    100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    30 @ 100mA, 10V
  • Power - Max
    20 W
  • Frequency - Transition
    10MHz
  • Operating Temperature
    -65°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Package / Case
    TO-225AA, TO-126-3
  • Supplier Device Package
    TO-126