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Home>Product>Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single>MMBT6517LT1G
MMBT6517LT1G
onsemi
MPN： MMBT6517LT1G
Categories： Transistors - Bipolar (BJT) - Single
Stock： 39444
Description： TRANS NPN 350V 0.1A SOT23-3
Datasheet： Download Now
RFQ： RFQ
Call us： 0755-83502530
inquiry： 2912879482@qq.com
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  • Manufacturer
    onsemi
  • Manufacturer Product Number
    MMBT6517LT1G
  • Stock
    39444
  • Package
    Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
  • Series
  • Transistor Type
    NPN
  • Current - Collector (Ic) (Max)
    100 mA
  • Voltage - Collector Emitter Breakdown (Max)
    350 V
  • Vce Saturation (Max) @ Ib, Ic
    1V @ 5mA, 50mA
  • Current - Collector Cutoff (Max)
    50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    20 @ 50mA, 10V
  • Power - Max
    225 mW
  • Frequency - Transition
    200MHz
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package
    SOT-23-3 (TO-236)