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Home>Product>Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single>MJE803G
MJE803G
onsemi
MPN： MJE803G
Categories： Transistors - Bipolar (BJT) - Single
Stock： 35003
Description： TRANS NPN DARL 80V 4A TO126
Datasheet： Download Now
RFQ： RFQ
Call us： 0755-83502530
inquiry： 2912879482@qq.com
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  • Manufacturer
    onsemi
  • Manufacturer Product Number
    MJE803G
  • Stock
    35003
  • Package
    Bulk
  • Series
  • Transistor Type
    NPN - Darlington
  • Current - Collector (Ic) (Max)
    4 A
  • Voltage - Collector Emitter Breakdown (Max)
    80 V
  • Vce Saturation (Max) @ Ib, Ic
    2.8V @ 40mA, 2A
  • Current - Collector Cutoff (Max)
    100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    750 @ 2A, 3V
  • Power - Max
    40 W
  • Frequency - Transition
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Package / Case
    TO-225AA, TO-126-3
  • Supplier Device Package
    TO-126