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Home>Product>Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single>MJD112T4
MJD112T4
onsemi
MPN： MJD112T4
Categories： Transistors - Bipolar (BJT) - Single
Stock： 52159
Description： TRANS DARL NPN 2A 100V DPAK
Datasheet： Download Now
RFQ： RFQ
Call us： 0755-83502530
inquiry： 2912879482@qq.com
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  • Manufacturer
    onsemi
  • Manufacturer Product Number
    MJD112T4
  • Stock
    52159
  • Package
    Cut Tape (CT),Digi-Reel®
  • Series
  • Transistor Type
    NPN - Darlington
  • Current - Collector (Ic) (Max)
    2 A
  • Voltage - Collector Emitter Breakdown (Max)
    100 V
  • Vce Saturation (Max) @ Ib, Ic
    2V @ 8mA, 2A
  • Current - Collector Cutoff (Max)
    20µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    1000 @ 2A, 3V
  • Power - Max
    20 W
  • Frequency - Transition
    25MHz
  • Operating Temperature
    -65°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package
    DPAK