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Home>Product>Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single>MJD112-001
MJD112-001
onsemi
MPN： MJD112-001
Categories： Transistors - Bipolar (BJT) - Single
Stock： 66795
Description： TRANS NPN DARL 100V 2A IPAK
Datasheet： Download Now
RFQ： RFQ
Call us： 0755-83502530
inquiry： 2912879482@qq.com
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  • Manufacturer
    onsemi
  • Manufacturer Product Number
    MJD112-001
  • Stock
    66795
  • Package
    Tube,Tube
  • Series
  • Transistor Type
    NPN - Darlington
  • Current - Collector (Ic) (Max)
    2 A
  • Voltage - Collector Emitter Breakdown (Max)
    100 V
  • Vce Saturation (Max) @ Ib, Ic
    3V @ 40mA, 4A
  • Current - Collector Cutoff (Max)
    20µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    1000 @ 2A, 3V
  • Power - Max
    1.75 W
  • Frequency - Transition
    25MHz
  • Operating Temperature
    -65°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Package / Case
    TO-251-3 Short Leads, IPak, TO-251AA
  • Supplier Device Package
    I-PAK