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Home>Product>Discrete Semiconductor Products>Diodes - Rectifiers - Arrays>G4S12040BM
G4S12040BM
Global Power Technology-GPT
MPN： G4S12040BM
Categories： Diodes - Rectifiers - Arrays
Stock： 13505
Description： SIC SCHOTTKY DIODE 1200V 40A 3-P
Datasheet： Download Now
RFQ： RFQ
Call us： 0755-83502530
inquiry： 2912879482@qq.com
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  • Manufacturer
    Global Power Technology-GPT
  • Manufacturer Product Number
    G4S12040BM
  • Stock
    13505
  • Package
    Cut Tape (CT),Tape & Box (TB)
  • Series
  • Diode Configuration
    1 Pair Common Cathode
  • Diode Type
    Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max)
    1200 V
  • Current - Average Rectified (Io) (per Diode)
    64.5A (DC)
  • Voltage - Forward (Vf) (Max) @ If
    1.6 V @ 20 A
  • Speed
    No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr)
    0 ns
  • Current - Reverse Leakage @ Vr
    30 μA @ 1200 V
  • Operating Temperature - Junction
    -55°C ~ 175°C
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Supplier Device Package
    TO-247AB