S P R I N G I C
Language:

Need Help? 0755-83502530

Tel 0755-83502530
Email 2912879482@qq.com
Home>Product>Discrete Semiconductor Products>Diodes - Rectifiers - Arrays>TRS12N65FB,S1Q
TRS12N65FB,S1Q
Toshiba Semiconductor and Storage
MPN： TRS12N65FB,S1Q
Categories： Diodes - Rectifiers - Arrays
Stock： 16159
Description： SIC SBD TO-247 V=650 IF=12A
RFQ： RFQ
Call us： 0755-83502530
inquiry： 2912879482@qq.com
Recommended For You
VB20100C-E3/4W
VB20100C-E3/4W
Vishay General Semiconductor - Diodes Division
VB40150C-E3/4W
VB40150C-E3/4W
Vishay General Semiconductor - Diodes Division
VS-C5TX3012-M3
VS-C5TX3012-M3
Vishay General Semiconductor - Diodes Division
VS-C5TH3012-M3
VS-C5TH3012-M3
Vishay General Semiconductor - Diodes Division
V40D100C-M3/I
V40D100C-M3/I
Vishay General Semiconductor - Diodes Division
  • Manufacturer
    Toshiba Semiconductor and Storage
  • Manufacturer Product Number
    TRS12N65FB,S1Q
  • Stock
    16159
  • Package
    Tube
  • Series
  • Diode Configuration
    1 Pair Common Cathode
  • Diode Type
    Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max)
    650 V
  • Current - Average Rectified (Io) (per Diode)
    6A (DC)
  • Voltage - Forward (Vf) (Max) @ If
    1.6 V @ 6 A
  • Speed
    No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr)
    0 ns
  • Current - Reverse Leakage @ Vr
    30 μA @ 650 V
  • Operating Temperature - Junction
    175°C
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Supplier Device Package
    TO-247